We use the coated powders of 3-5 with a relatively high ratio Ba/Ti to的简体中文翻译

We use the coated powders of 3-5 wi

We use the coated powders of 3-5 with a relatively high ratio Ba/Ti to discuss the dielectric properties of the as-cold-sintered ceramics. Fig. 9 compares the permittivity loss as a function of temperature for ceramics processed under different conditions. Fig. 9(a) and 9(b) show the dielectric properties of the ceramics with added water or Ba(OH)2 solution, respectively. The results show that, at room temperature, the ceramic with added Ba(OH)2 solution has higher relative dielectric permittivity than the ceramic with added water (~185 vs ∼127 at 1 kHz). The enhanced dielectric permittivity is caused by the compensation of Ba upon adding Ba(OH)2 solution, which reduces the Ba vacancies. In addition, a wide-ranging diffuse dielectric anomaly appears in both ceramics because the coated powders remain a part of the tetragonal phase. The as-cold-sintered ceramics were post-annealed at 700 and 900 °C, and the relative dielectric permittivity increases. As shown in Fig. 9(c) and 9(d), the dielectric constant increases from ∼185 to ∼810 at room temperature (1 kHz) after annealing at 700 °C, and then rises to ∼1550 if further annealed at 900 °C. This indicates that the post-annealing process further promotes the evolution of the crystal phase. Moreover, the dielectric abnormality appears clearly at ∼120 °C, which is the Curie-transition temperature of BaTiO3. The partly developed tetragonal phase of the ceramics after post-annealing thus leads to the diffuse nature of this dielectric anomaly.
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我们使用Ba / Ti相对较高的3-5涂层粉末来讨论冷烧结陶瓷的介电性能。图9比较了在不同条件下加工的陶瓷的介电常数损耗随温度的变化。图9(a)和9(b)分别示出了添加水或Ba(OH)2溶液的陶瓷的介电性能。结果表明,在室温下,添加Ba(OH)2溶液的陶瓷具有比添加水的陶瓷更高的相对介电常数(〜185 vs. 1kHz时约为127)。介电常数的提高是由于添加Ba(OH)2溶液时补偿了Ba而引起的,从而降低了Ba的空位。另外,由于涂覆的粉末保留了四方相的一部分,因此在两种陶瓷中都出现了广泛的扩散介电异常。将冷烧结的陶瓷在700和900°C下进行后退火,并且相对介电常数增加。如图9(c)和9(d)所示,在700°C退火后,在室温(1 kHz)下介电常数从约185从185增加到810,然后如果在900进一步退火则上升到约1550。 ℃。这表明后退火过程进一步促进了结晶相的发展。此外,介电异常在〜120°C清晰可见,这是BaTiO3的居里转变温度。因此,在后退火之后,陶瓷的部分发展的四方相导致该介电异常的扩散性质。介电常数在700°C退火后,在室温(1 kHz)下从约185增加到〜810,然后如果在900°C进一步退火,则介电常数上升到〜1550。这表明后退火过程进一步促进了结晶相的发展。此外,介电异常在〜120°C清晰可见,这是BaTiO3的居里转变温度。因此,在后退火之后,陶瓷的部分发展的四方相导致该介电异常的扩散性质。介电常数在700°C退火后,在室温(1 kHz)下从约185增加到〜810,然后如果在900°C进一步退火,则介电常数上升到〜1550。这表明后退火过程进一步促进了结晶相的发展。此外,介电异常在〜120°C清晰可见,这是BaTiO3的居里转变温度。因此,在后退火之后,陶瓷的部分发展的四方相导致该介电异常的扩散性质。
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We use the coated powders of 3-5 with a relatively high ratio Ba/Ti to discuss the dielectric properties of the as-cold-sintered ceramics. Fig. 9 compares the permittivity loss as a function of temperature for ceramics processed under different conditions. Fig. 9(a) and 9(b) show the dielectric properties of the ceramics with added water or Ba(OH)2 solution, respectively. The results show that, at room temperature, the ceramic with added Ba(OH)2 solution has higher relative dielectric permittivity than the ceramic with added water (~185 vs ∼127 at 1 kHz). The enhanced dielectric permittivity is caused by the compensation of Ba upon adding Ba(OH)2 solution, which reduces the Ba vacancies. In addition, a wide-ranging diffuse dielectric anomaly appears in both ceramics because the coated powders remain a part of the tetragonal phase. The as-cold-sintered ceramics were post-annealed at 700 and 900 °C, and the relative dielectric permittivity increases. As shown in Fig. 9(c) and 9(d), the dielectric constant increases from ∼185 to ∼810 at room temperature (1 kHz) after annealing at 700 °C, and then rises to ∼1550 if further annealed at 900 °C. This indicates that the post-annealing process further promotes the evolution of the crystal phase. Moreover, the dielectric abnormality appears clearly at ∼120 °C, which is the Curie-transition temperature of BaTiO3. The partly developed tetragonal phase of the ceramics after post-annealing thus leads to the diffuse nature of this dielectric anomaly.
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结果 (简体中文) 3:[复制]
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本文用含较高Ba/Ti比的3-5包覆粉体研究了as冷烧结陶瓷的介电性能。图9比较了在不同条件下加工的陶瓷的介电常数损耗与温度的关系。图9(a)和9(b)分别示出了添加水或Ba(OH)2溶液的陶瓷的介电性能。结果表明,在室温下,添加Ba(OH)2溶液的陶瓷比添加水的陶瓷具有更高的相对介电常数(1khz时为185vs∼127)。Ba(OH)2溶液的加入补偿了Ba,降低了Ba空位,提高了介电常数。此外,由于涂层粉末仍然是四方相的一部分,在两种陶瓷中都出现了大范围的弥散介电异常。在700和900℃下对as冷烧结陶瓷进行后退火,相对介电常数增加。如图9(c)和9(d)所示,在700℃退火后,介电常数在室温(1khz)下从∼185增加到∼810,然后在900℃进一步退火后增加到∼1550。这表明退火后过程进一步促进了晶体相的演化。此外,在120℃时(即BaTiO3的居里转变温度)出现明显的介电异常。退火后陶瓷的四方相部分发育,从而导致这种介电异常的扩散性质。<br>
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