Several approaches, such as hot isostatic pressing, hot pressing, micr的简体中文翻译

Several approaches, such as hot iso

Several approaches, such as hot isostatic pressing, hot pressing, microwave sintering and normal pressure sintering14-17, have been studied and used to prepare ITO target. High density ITO target assisted by Bi2O3-Nb2O5 has been prepared, showing a maximum relative density of 99.6% and a minimum resistivity of 1.78×10-4 Ω·cm1. Bi2O3 and TiO2 were chosen as sintering additives to improve the density and decrease the resistivity of target. However, the addition of sintering additive with high melting point causes impurity phase in target, which will seriously reduce the quality of film. Moreover, new phases of In2SnO5 and In4Sn3O12 easily appear due to the decomposition of ITO at high temperature. Densification of ITO ceramic is a hard process20-22. However, preparing ITO target, with high density,single-phase, excellent uniformity and high purity is a prerequisite for developing new generation ITO functional film materials.
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结果 (简体中文) 1: [复制]
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Several approaches, such as hot isostatic pressing, hot pressing, microwave sintering and normal pressure sintering14-17, have been studied and used to prepare ITO target. High density ITO target assisted by Bi2O3-Nb2O5 has been prepared, showing a maximum relative density of 99.6% and a minimum resistivity of 1.78×10-4 Ω·cm1. Bi2O3 and TiO2 were chosen as sintering additives to improve the density and decrease the resistivity of target. However, the addition of sintering additive with high melting point causes impurity phase in target, which will seriously reduce the quality of film. Moreover, new phases of In2SnO5 and In4Sn3O12 easily appear due to the decomposition of ITO at high temperature. Densification of ITO ceramic is a hard process20-22. However, preparing ITO target, with high density,single-phase, excellent uniformity and high purity is a prerequisite for developing new generation ITO functional film materials.
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结果 (简体中文) 2:[复制]
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研究了热等静压、热压、微波烧结和正常压烧结等几种方法,并用于准备ITO目标。由 Bi2O3-Nb2O5 辅助的高密度 ITO 目标已经制备,最大相对密度为 99.6%,最小电阻率为 1.78×10-4 Ω cm1。Bi2O3和TiO2被选作烧结添加剂,以提高目标的密度和电阻率。然而,添加高熔点的烧结添加剂会导致目标中的杂质相,从而严重降低薄膜的质量。此外,由于ITO在高温下分解,In2SnO5和In4Sn3O12的新相很容易出现。ITO陶瓷的致密是一个硬的过程20-22。然而,制备ITO目标,高密度、单相、均匀性高、纯度高是开发新一代ITO功能薄膜材料的先决条件。
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结果 (简体中文) 3:[复制]
复制成功!
采用热等静压、热压、微波烧结、常压烧结等方法制备了ITO靶材。制备了Bi2O3-Nb2O5辅助的高密度ITO靶,最大相对密度为99.6%,最小电阻率为1.78×10-4Ω·cm1。选用Bi2O3和TiO2作为烧结助剂,提高了烧结体的密度,降低了靶材的电阻率。但是,高熔点烧结添加剂的加入会使靶材中产生杂质相,严重降低薄膜的质量。此外,由于ITO在高温下的分解,很容易出现In2SnO5和In4Sn3O12的新相。ITO陶瓷的致密化是一个硬性的过程。然而,制备高密度、单相、均匀性好、纯度高的ITO靶材是开发新一代ITO功能薄膜材料的前提。<br>
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