Several approaches, such as hot isostatic pressing, hot pressing, microwave sintering and normal pressure sintering14-17, have been studied and used to prepare ITO target. High density ITO target assisted by Bi2O3-Nb2O5 has been prepared, showing a maximum relative density of 99.6% and a minimum resistivity of 1.78×10-4 Ω·cm1. Bi2O3 and TiO2 were chosen as sintering additives to improve the density and decrease the resistivity of target. However, the addition of sintering additive with high melting point causes impurity phase in target, which will seriously reduce the quality of film. Moreover, new phases of In2SnO5 and In4Sn3O12 easily appear due to the decomposition of ITO at high temperature. Densification of ITO ceramic is a hard process20-22. However, preparing ITO target, with high density,single-phase, excellent uniformity and high purity is a prerequisite for developing new generation ITO functional film materials.
Several approaches, such as hot isostatic pressing, hot pressing, microwave sintering and normal pressure sintering14-17, have been studied and used to prepare ITO target. High density ITO target assisted by Bi2O3-Nb2O5 has been prepared, showing a maximum relative density of 99.6% and a minimum resistivity of 1.78×10-4 Ω·cm1. Bi2O3 and TiO2 were chosen as sintering additives to improve the density and decrease the resistivity of target. However, the addition of sintering additive with high melting point causes impurity phase in target, which will seriously reduce the quality of film. Moreover, new phases of In2SnO5 and In4Sn3O12 easily appear due to the decomposition of ITO at high temperature. Densification of ITO ceramic is a hard process20-22. However, preparing ITO target, with high density,single-phase, excellent uniformity and high purity is a prerequisite for developing new generation ITO functional film materials.
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